BC858C-7 – DIODES INCORPORATED

 
Part Number:
BC858C-7
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
CHINA
 
 
Description:

BJT PNP Transistor 30V, 100mA, 200MHz, 300mW, SOT-23-3, Surface Mount

 
 
Datasheet:
 
 
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Product Details:

Overview

The BC858C-7 is a PNP bipolar junction transistor (BJT) manufactured by DIODES INCORPORATED. This component is designed for general purpose amplification and switching applications. It features a collector-emitter voltage rating of 30V and a collector current of 100mA. The BC858C-7 is housed in a small SOT-23-3 surface mount package, making it suitable for high-density circuit board designs. It offers a transition frequency of 200MHz and a power dissipation of 300mW.

Key Features

  • PNP Transistor
  • 30V Collector-Emitter Voltage
  • 100mA Collector Current
  • 200MHz Transition Frequency
  • SOT-23-3 Package

Applications

This transistor is commonly used in various electronic circuits where signal amplification or switching functions are required. Its compact size and performance characteristics make it suitable for a range of applications.

  • Audio Amplifiers
  • Switching Circuits
  • Signal Processing
 
 
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