BC850CWE6327HTSA1 – INFINEON
Part Number:
BC850CWE6327HTSA1
Manufacturer:
Date Code:
06
RoHS:
RoHS Compliant
MSL:
1
COO:
MALAYSIA
Description:
NPN Bipolar Transistor, 45 V, 0.1 A, PG‑SOT323 Package
Datasheet:
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Stock Quantity: 2631
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.29 |
| 10+ | |
| 50+ | |
| 100+ |
2631 in stock
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Product Details:
Overview
The BC850CWE6327HTSA1 is an NPN bipolar junction transistor (BJT) manufactured by Infineon. This transistor is designed for general-purpose amplification and switching applications. It features a collector-emitter voltage (Vceo) of 45V and a collector current (Ic) rating of 0.1A. The component is supplied in a PG-SOT323 surface-mount package.
Key Features
- NPN Polarity
- 45V Collector-Emitter Voltage
- 0.1A Collector Current
- PG-SOT323 Package
Applications
This NPN transistor is commonly used in various electronic circuits requiring signal amplification or switching capabilities. Its compact size and electrical characteristics make it suitable for diverse applications.
- General Purpose Amplification
- Switching Circuits
- Signal Processing
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