BAS116 – NXP

Overview

The Nexperia BAS116 is a highly efficient, single small-signal switching diode designed for high-speed applications. Its critical operational characteristic lies in its low forward voltage drop (Vf) of 1.25V at 215mA, minimizing power dissipation and heat generation in sensitive circuits. A key design consideration often overlooked is the trade-off between its rapid switching speed, indicated by a typical recovery time of 3µs, and its maximum surge current capability of 4A, which necessitates careful thermal management in high-pulsed current scenarios to prevent junction degradation.

Key Features

• Peak Reverse Voltage (Vr): 85 V
• Maximum Surge Current (Ifsm): 4 A
• Forward Current (If): 215 mA
• Forward Voltage (Vf): 1.25 V (at If = 215 mA)
• Reverse Current (Ir): 3 pA (at Vr = 85 V)
• Package: SOT-23-3 (3mm x 1.4mm x 1mm)

Applications

The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.

• High-speed signal switching in RF front-ends
• Protection circuitry for sensitive digital logic inputs
• Demultiplexing and signal routing in data acquisition systems
• Voltage clamping and transient suppression in power delivery networks