2N7002K-T1-GE3 – SILICONIX
Part Number:
2N7002K-T1-GE3
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
THAILAND
Description:
N‑Channel MOSFET, 60 V, 300 mA, TO‑236
Datasheet:
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Product Details:
Overview
The 2N7002K-T1-GE3 is a discrete N-Channel enhancement mode MOSFET manufactured by SILICONIX. This transistor is designed for low-voltage, high-speed switching applications. It features a drain-source voltage rating of 60V and a continuous drain current of 300mA. The component is supplied in a compact TO-236 surface-mount package.
Key Features
- N-Channel Enhancement Mode
- 60V Drain-Source Voltage (Vds)
- 300mA Continuous Drain Current (Id)
- Low Gate Threshold Voltage
- TO-236 (SOT-23) Package
Applications
This MOSFET is commonly used in various switching and amplification circuits. Its small size and efficient performance make it suitable for portable and space-constrained designs. It is often implemented in circuits requiring logic-level gate drive.
- DC-DC Converters
- Load Switching
- Small Signal Amplification
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