2N7002,215 – NXP

Part Number:

2N7002,215

Manufacturer:

NXP

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N-Channel MOSFET 60V 300mA 830mW TO-236AB, Surface Mount

Datasheet:

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Product Details:

Overview

The 2N7002,215 is a discrete N-Channel enhancement mode Field Effect Transistor (MOSFET) manufactured by NXP. This device is designed for general purpose switching applications. It features a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 300mA. The component is housed in a small TO-236AB (SOT-23) surface mount package.

Key Features

N-Channel enhancement mode
60V Drain-Source Voltage
300mA Continuous Drain Current
830mW Power Dissipation

Applications

This MOSFET is commonly used in various electronic circuits requiring efficient switching capabilities. Its compact size and performance characteristics make it suitable for a range of low-power applications.

DC-DC converters
Load switching
Small signal amplification