2N7002 – INVAC

The 2N7002 is a discrete N-channel enhancement-mode MOSFET fabricated in a small signal process and designed for low-voltage, low-current switching applications. It features a drain-source voltage (Vds) rating of 60V and a continuous drain current (Id) rating of 115mA. The device has a maximum power dissipation (Pd) of 200mW when mounted on a FR4 PCB. The 2N7002 is supplied in a SOT-23-3 surface-mount package, facilitating high-density board layouts. Key parameters include a gate threshold voltage (Vgs(th)) typically between 0.8V and 2.1V, and a static drain-source on-resistance (Rds(on)) of approximately 7.5 ohms at a gate-source voltage (Vgs) of 10V. This MOSFET is suitable for use in portable devices, logic-level translation, and small signal amplification circuits where space and power efficiency are critical.