2N7002DW H6327 VALEO – INFINEON

Part Number:

2N7002DW H6327 VALEO

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

Dual N‑Channel MOSFET, 60 V, 0.3 A, 3000 mOhm, SOT‑363 Package

Datasheet:

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Product Details:

Overview

The 2N7002DW H6327 VALEO is a dual N-Channel enhancement mode MOSFET manufactured by INFINEON. This component features two independent MOSFETs within a single SOT-363 package. Each transistor is rated for a drain-source voltage of 60V and a continuous drain current of 0.3A, with a typical on-state resistance of 3000 mOhm.

Key Features

Dual N-Channel configuration
60V Drain-Source Voltage (Vds)
0.3A Continuous Drain Current (Id)
3000 mOhm On-State Resistance (Rds(on))
SOT-363 Surface Mount Package

Applications

These dual MOSFETs are commonly used in low-power switching applications and logic-level translation circuits. Their compact size makes them suitable for designs where board space is limited. They are also found in portable devices and battery-powered systems.

Low-Side Switching
DC-DC Conversion
Load Switching