60 V, 3.2 A N‑Channel MOSFET, 47 mOhm, SOT‑89 Package
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The BSS606N H6327 is an N-Channel enhancement mode MOSFET manufactured by Infineon. This transistor is designed for switching applications requiring a voltage rating of up to 60V and a continuous drain current of 3.2A. It features a typical on-state resistance of 47 mOhm and is provided in a compact SOT-89 surface mount package.
This MOSFET is suitable for various power management and load switching tasks. Its characteristics make it appropriate for use in several electronic systems.