BSS64LT1G – ONSEMI
Part Number:
BSS64LT1G
Manufacturer:
Date Code:
0524
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
BJT Bipolar Transistor, NPN, 120 V, 100 mA
Datasheet:
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Stock Quantity: 3000
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.67 |
| 10+ | |
| 50+ | |
| 100+ |
3000 in stock
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Product Details:
Overview
The BSS64LT1G is an NPN bipolar junction transistor (BJT) manufactured by ONSEMI. This transistor is designed for general purpose amplification and switching applications requiring a collector-emitter voltage of up to 120V and a collector current of 100mA. It is supplied in a SOT-23 surface mount package.
Key Features
- NPN Polarity
- 120 V Collector-Emitter Voltage (Vceo)
- 100 mA Continuous Collector Current (Ic)
- SOT-23 Package
Applications
This NPN transistor is commonly used in diverse electronic circuits for signal amplification and electronic switching. Its voltage and current ratings make it suitable for various low-power applications.
- General Purpose Amplification
- Switching Circuits
- Linear Regulators
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