BSS670S2L H6327 – INFINEON

Part Number:

BSS670S2L H6327

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

N‑Channel, 55 V, 0.54 A MOSFET, SOT23 Package

Datasheet:

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Product Details:

Overview

The BSS670S2L H6327 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for switching applications requiring low on-resistance and is housed in a small SOT23 surface-mount package. It features a drain-source voltage rating of 55V and a continuous drain current capability of 0.54A.

Key Features

N-Channel enhancement mode
55V Drain-Source Voltage (Vds)
0.54A Continuous Drain Current (Id)
Low on-resistance (Rds(on))
SOT23 Package

Applications

This MOSFET is suitable for various low-power switching and amplification tasks in electronic circuits. Its compact size makes it ideal for space-constrained designs. Common applications include:

DC-DC converters
Load switching
Portable devices
Small signal amplification