BSC076N04ND – INFINEON

Part Number:

BSC076N04ND

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

Dual N‑Channel MOSFET, 40 V, 20 A, 7.0 mOhm

Datasheet:

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Product Details:

Overview

The BSC076N04ND is a dual N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This component is designed for switching applications requiring efficient power management. It features a drain-source voltage of 40V and a continuous drain current of 20A, with a typical on-state resistance of 7.0 mOhm. The component is supplied in a standard TDSON-8 package.

Key Features

40V Drain-Source Voltage
20A Continuous Drain Current
7.0 mOhm On-State Resistance (typical)
Dual N-Channel Configuration

Applications

This MOSFET is commonly used in various power control and conversion circuits. Its low on-resistance makes it suitable for applications where minimizing power loss is critical. The dual channel configuration allows for use in half-bridge or full-bridge topologies.

Synchronous Rectification
DC-DC Conversion
Motor Control