IMW120R060M1H – INFINEON

Electronic Components
 
Part Number:
IMW120R060M1H
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
 
 
COO:
 
 
Description:

1200 V, 36 A N‑Channel MOSFET, 60 mOhm, TO‑247‑3 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The IMW120R060M1H is a 1200V N-Channel MOSFET manufactured by Infineon. This power MOSFET is designed for high-voltage switching applications, offering a drain-source on-resistance (Rds(on)) of 60 mOhm. It is capable of handling a continuous drain current of 36A and is packaged in a TO-247-3 through-hole mounting configuration.

Key Features

  • 1200V Drain-Source Voltage (Vds)
  • 36A Continuous Drain Current (Id)
  • 60 mOhm On-Resistance (Rds(on))
  • N-Channel Enhancement Mode

Applications

This high-voltage MOSFET is commonly used in power electronic circuits requiring efficient and reliable switching performance. Its characteristics make it suitable for demanding environments where high voltage and current control are necessary.

  • Power Factor Correction (PFC) circuits
  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)
 
 
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