IMW120R090M1H – INFINEON

Part Number:

IMW120R090M1H

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

Not Applicable

COO:

AUSTRIA

Description:

1200 V, 26 A, 90 mOhm N‑Channel MOSFET, TO‑247‑3 Package

Datasheet:

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Product Details:

Overview

The IMW120R090M1H is a 1200V N-Channel MOSFET manufactured by Infineon Technologies. This power transistor is designed for high-voltage switching applications, offering a low on-resistance of 90 mOhm and a continuous drain current of 26A. It is housed in a TO-247-3 package, providing efficient thermal performance.

Key Features

1200V Drain-Source Voltage
90 mOhm On-Resistance (RDS(on))
26A Continuous Drain Current (ID)
N-Channel Enhancement Mode

Applications

This MOSFET is suitable for use in various power electronic systems requiring high voltage and efficient switching. Its characteristics make it appropriate for deployment in industrial and energy-related sectors.

Solar Inverters
Uninterruptible Power Supplies (UPS)
Electric Vehicle (EV) Charging Stations