IMW120R140M1H – INFINEON

Part Number:

IMW120R140M1H

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

Not Applicable

COO:

AUSTRIA

Description:

1200 V, 19 A N‑Channel MOSFET, 140 mOhm, TO247‑3 Package

Datasheet:

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Product Details:

Overview

The IMW120R140M1H is a discrete N-Channel MOSFET manufactured by Infineon. This component is designed for high-voltage switching applications, offering a drain-source voltage rating of 1200V and a continuous drain current of 19A. It features a typical on-state resistance of 140 mOhm and is packaged in a TO247-3 through-hole format.

Key Features

1200V Drain-Source Voltage (Vds)
19A Continuous Drain Current (Id)
140 mOhm On-State Resistance (Rds(on))
N-Channel Enhancement Mode

Applications

This MOSFET is suitable for use in power electronics circuits requiring high voltage and efficient switching. Its characteristics make it appropriate for various industrial and renewable energy systems.

Power Factor Correction (PFC) circuits
Solar Inverters
Electric Vehicle (EV) charging stations