BSC027N10NS5 – INFINEON

Part Number:

BSC027N10NS5

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

100 V, 100 A N‑Channel MOSFET, 2.1 mOhm, TSON‑8 Package

Datasheet:

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Product Details:

Overview

The BSC027N10NS5 is a 100V N-Channel MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power conversion. It features a low on-state resistance of 2.1 mOhm and a continuous drain current of 100A. The component is packaged in a TSON-8 surface-mount housing.

Key Features

100V Drain-Source Voltage
100A Continuous Drain Current
2.1 mOhm On-State Resistance (RDS(on))
N-Channel Enhancement Mode
TSON-8 Package

Applications

This MOSFET is suitable for various power management and switching circuits. Its low resistance minimizes power losses, making it ideal for high-efficiency designs. The surface-mount package enables compact circuit layouts.

Synchronous Rectification
DC-DC Converters
Motor Control