IPN60R3K4CE – INFINEON

Part Number:

IPN60R3K4CE

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

N‑Channel MOSFET, 600 V, 2.6 A, 3400 mOhm, SOT223 Package

Datasheet:

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Product Details:

Overview

The IPN60R3K4CE is a discrete N-Channel MOSFET manufactured by Infineon. This power transistor is designed for switching applications requiring a voltage rating of 600V and a continuous drain current of 2.6A. It features a typical on-state resistance of 3400 mOhm and is provided in a compact SOT223 package for surface mount assembly.

Key Features

600V Drain-Source Voltage
2.6A Continuous Drain Current
3400 mOhm On-State Resistance (RDS(on))
N-Channel Enhancement Mode

Applications

This MOSFET is suitable for various power management and switching circuits. Its voltage and current capabilities make it applicable in several electronic systems where efficient power control is needed. The SOT223 package allows for space-saving designs.

LED Lighting Drivers
Auxiliary Power Supplies
High Voltage DC-DC Conversion