IPN60R1K0CEATMA1 – INFINEON
Part Number:
IPN60R1K0CEATMA1
Manufacturer:
Date Code:
1727
RoHS:
RoHS Compliant
MSL:
1
COO:
GERMANY
Description:
N-Channel MOSFET, 650V, 6.8A, 1 Ohm, SOT-223, 4-Pin (3 + Tab)
Datasheet:
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Stock Quantity: 1486
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.14 |
| 10+ | |
| 50+ | |
| 100+ |
1486 in stock
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Product Details:
Overview
The IPN60R1K0CEATMA1 is an N-Channel power MOSFET manufactured by Infineon. This component is designed for high-voltage switching applications, offering a drain-source voltage rating of 650V and a continuous drain current of 6.8A. It features an on-state resistance of 1 Ohm and is provided in a SOT-223 package with a 4-Pin configuration (3 pins + Tab).
Key Features
- 650V Drain-Source Voltage (Vds)
- 6.8A Continuous Drain Current (Id)
- 1 Ohm On-State Resistance (Rds(on))
- N-Channel Enhancement Mode
Applications
This MOSFET is typically used in power electronics circuits that require efficient and reliable high-voltage switching. Its characteristics make it suitable for a range of applications.
- Switch-Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) circuits
- LED Lighting Drivers
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