IPN60R600P7S – INFINEON

Electronic Components
 
Part Number:
IPN60R600P7S
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
AUSTRIA
 
 
Description:

N‑Channel, 600 V, 6 A, 490 mOhm MOSFET, SOT‑223 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The IPN60R600P7S is a discrete N-Channel power MOSFET manufactured by Infineon Technologies. This component features a voltage rating of 600V and a continuous drain current of 6A. It exhibits a typical on-state resistance (Rds(on)) of 490 mOhm. The IPN60R600P7S is supplied in a SOT-223 surface-mount package.

Key Features

  • N-Channel Enhancement Mode
  • 600V Drain-Source Voltage (Vds)
  • 490 mOhm On-State Resistance (Rds(on))
  • Logic Level Input

Applications

This MOSFET is suited for various power switching applications where efficient energy conversion is needed. Its characteristics make it suitable for use in several electronic circuits and systems.

  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC)
  • LED Lighting
 
 
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