N‑Channel, 600 V, 6 A, 490 mOhm MOSFET, SOT‑223 Package
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The IPN60R600P7S is a discrete N-Channel power MOSFET manufactured by Infineon Technologies. This component features a voltage rating of 600V and a continuous drain current of 6A. It exhibits a typical on-state resistance (Rds(on)) of 490 mOhm. The IPN60R600P7S is supplied in a SOT-223 surface-mount package.
This MOSFET is suited for various power switching applications where efficient energy conversion is needed. Its characteristics make it suitable for use in several electronic circuits and systems.