IPD350N06L G – INFINEON

Part Number:

IPD350N06L G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

60 V, 29 A, 35 mOhm N‑Channel MOSFET, TO‑252‑3 Package

Datasheet:

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Product Details:

Overview

The IPD350N06L G is an N-Channel MOSFET manufactured by Infineon Technologies. This component is designed for switching and amplification applications, offering a drain-source voltage of 60V and a continuous drain current of 29A. It features a typical on-state resistance (Rds(on)) of 35 mOhms. The MOSFET is packaged in a TO-252-3 housing for surface mount assembly.

Key Features

N-Channel Enhancement Mode
Vds: 60V Drain-Source Voltage
Ids: 29A Continuous Drain Current
Rds(on): 35 mOhm On-State Resistance

Applications

This MOSFET is commonly utilized in various power management circuits and control systems. Its characteristics make it suitable for designs requiring efficient switching and moderate power handling capabilities.

DC-DC Converters
Motor Control Circuits
Load Switching