IPD30N06S2L-23 – INFINEON

Part Number:

IPD30N06S2L-23

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

N-Channel, 55 V, 30 A, 23 mOhm MOSFET, TO‑252 Package

Datasheet:

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Product Details:

Overview

The IPD30N06S2L-23 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power management. It features a drain-source voltage of 55V and a continuous drain current of 30A. The device is housed in a TO-252 package, suitable for surface mount assembly.

Key Features

N-Channel enhancement mode
V_DS: 55V
I_D: 30A
R_DS(on): 23 mOhm (typical)

Applications

This MOSFET is commonly utilized in various power electronic circuits. Its characteristics make it suitable for use in systems needing efficient switching and power regulation.

DC-DC converters
Motor control circuits
Load switching