IPD320N20N3 G – INFINEON

Part Number:

IPD320N20N3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

N-Channel MOSFET, 200 V, 34 A, 32 mOhm, TO-252 Package

Datasheet:

Spotted a problem with product information? – let us know

ORDER NOW

Stock Quantity: 0

GET QUOTE

Contact us for volume pricing

Same day shipping if ordered before 14.00 GMT
6 month warranty on all stock items
All stock held and shipped from our UK warehouse
Worldwide shipping available, contact us for a quotation
We can ship on your DHL or UPS account if required
Any import duties or taxes are the responsibility of the receiver

Product Details:

Overview

The IPD320N20N3 G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power conversion. It features a drain-source voltage rating of 200V and a continuous drain current of 34A. The device exhibits a typical on-state resistance of 32 mOhm and is supplied in a TO-252 package for surface mount assembly.

Key Features

N-Channel enhancement mode
V_DS: 200V
I_D: 34A
R_DS(on): 32 mOhm (typical)

Applications

This MOSFET is commonly utilized in various power management systems and switching circuits. Its characteristics make it suitable for use in environments demanding efficient and reliable performance.

DC-DC converters
Motor control circuits
Power supplies