BSC110N06NS3 G – INFINEON

Part Number:

BSC110N06NS3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N-Channel MOSFET, 60 V, 50 A, 11 mOhm, TDSON‑8 Package

Datasheet:

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Product Details:

Overview

The BSC110N06NS3 G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for switching applications requiring efficient power management. It features a drain-source voltage rating of 60V and a continuous drain current of 50A. The component is housed in a TDSON-8 surface-mount package, suitable for automated assembly.

Key Features

N-Channel enhancement mode
VDS: 60V
ID: 50A
RDS(on): 11 mOhm (typical)

Applications

This MOSFET is commonly employed in various power electronic circuits. Its characteristics make it suitable for use in systems requiring efficient switching and low on-state resistance. Typical deployment environments include power supplies and motor control.

Synchronous rectification
DC-DC converters
Motor control circuits