BSC031N06NS3 G – INFINEON

Part Number:

BSC031N06NS3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

N-Channel MOSFET, 60 V, 100 A, 3.1 mOhm, TDSON‑8 Package

Datasheet:

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Product Details:

Overview

The BSC031N06NS3 G is an N-Channel MOSFET manufactured by Infineon. This transistor is designed for switching applications, offering a drain-source voltage of 60V and a continuous drain current of 100A. It features a low on-state resistance of 3.1 mOhm. The component is housed in a TDSON‑8 package for efficient thermal dissipation.

Key Features

N-Channel Enhancement Mode
VDS: 60V
ID: 100A
RDS(on): 3.1 mΩ (typical)

Applications

This MOSFET is suitable for various power management and switching circuits. Its characteristics make it useful in systems requiring efficient power conversion and control.

Synchronous Rectification
DC-DC Converters
Motor Control