IPD30N06S2L-13 – INFINEON

Electronic Components
 
Part Number:
IPD30N06S2L-13
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
MALAYSIA
 
 
Description:

N-Channel MOSFET, 55 V, 30 A, 13 mOhm, TO-252 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The IPD30N06S2L-13 is an N-Channel enhancement mode MOSFET manufactured by INFINEON. This power transistor is designed for switching applications requiring efficient power conversion. It features a drain-source voltage rating of 55V and a continuous drain current of 30A. The device exhibits a low on-state resistance of 13 mOhm and is supplied in a TO-252 package for surface mount assembly.

Key Features

  • N-Channel enhancement mode
  • VDS: 55V
  • ID: 30A
  • RDS(on): 13 mOhm

Applications

This MOSFET is commonly used in various power management and control circuits. Its characteristics make it suitable for implementation in systems needing efficient switching and low power dissipation.

  • DC-DC converters
  • Motor control
  • Load switching
 
 
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