N‑Channel MOSFET, 100 V, 44 A, PG-TDSON Package
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The BSC0803LSATMA1 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for switching applications requiring a drain-source voltage of up to 100V and a continuous drain current of 44A. It is packaged in a PG-TDSON housing, providing efficient thermal performance.
This MOSFET is suitable for various power switching and control circuits. Its characteristics make it appropriate for use in systems demanding efficient power management and compact designs.