GTRB424908FC1V1-R0 – MACOM

Part Number:

GTRB424908FC1V1-R0

Manufacturer:

MACOM

Date Code:

20+

RoHS:

RoHS Compliant

MSL:

COO:

Description:

450 W, 48 V RF GaN on SiC HEMT, 3700–4000 MHz, Thermally Enhanced

Datasheet:

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Product Details:

Overview

The GTRB424908FC1V1-R0 is a high-power RF Gallium Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistor (HEMT) from MACOM. This device delivers 450 Watts of output power at 48 Volts, operating within a frequency range of 3700 to 4000 MHz. It features a thermally enhanced package for efficient heat dissipation.

Key Features

450 W Output Power
48 V Operation
3700–4000 MHz Frequency Range
GaN on SiC Technology

Applications

This GaN HEMT is suitable for various high-power RF applications requiring efficient and reliable performance across the specified frequency band. Its high power capability and thermal characteristics make it ideal for demanding environments.

Radar Systems
Wireless Infrastructure
Industrial Heating