GTRB384608FC-V1-R0 – MACOM

Part Number:

GTRB384608FC-V1-R0

Manufacturer:

MACOM

Date Code:

21+

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

125 V, 7.85 A RF MOSFET Transistor, 7-Pin H-37248KC-6/2 Case

Datasheet:

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Product Details:

Overview

The GTRB384608FC-V1-R0 is a discrete RF MOSFET transistor manufactured by MACOM. This device is designed for high-power radio frequency applications, offering a drain-source breakdown voltage of 125 V and a drain current capacity of 7.85 A. It is supplied in a 7-Pin H-37248KC-6/2 case.

Key Features

125 V Drain-Source Breakdown Voltage
7.85 A Continuous Drain Current
RF MOSFET Technology
7-Pin H-37248KC-6/2 Package

Applications

This RF MOSFET transistor is typically utilized in power amplification stages within radio frequency systems. Its voltage and current handling capabilities make it suitable for various high-frequency applications.

RF Power Amplifiers
High-Frequency Inverters
Radio Transmitters