ZXMN3A03E6TA – DIODES INCORPORATED
Part Number:
ZXMN3A03E6TA
Manufacturer:
Date Code:
10
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
N‑Channel MOSFET, 30 V, 3.7 A, SOT‑23‑6 Package
Datasheet:
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Product Details:
Overview
The ZXMN3A03E6TA is an N-Channel enhancement mode MOSFET manufactured by DIODES INCORPORATED. This transistor is designed for low voltage, high-speed switching applications. It features a drain-source voltage rating of 30V and a continuous drain current of 3.7A. The component is supplied in a compact SOT-23-6 surface mount package.
Key Features
- N-Channel Enhancement Mode
- VDS: 30V
- ID: 3.7A
- Low On-Resistance
- SOT-23-6 Package
Applications
This MOSFET is suitable for a variety of power management and switching circuits. Its compact size and efficient performance make it appropriate for use in portable devices and space-constrained applications.
- DC-DC Converters
- Load Switching
- Power Management in Portable Devices
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