ZXMN6A11GTA – DIODES INCORPORATED

Part Number:

ZXMN6A11GTA

Manufacturer:

DIODES INCORPORATED

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N-Channel MOSFET, 60 V, 3.1 A, SOT223

Datasheet:

Spotted a problem with product information? – let us know

ORDER NOW

Stock Quantity: 0

GET QUOTE

Contact us for volume pricing

Same day shipping if ordered before 14.00 GMT
6 month warranty on all stock items
All stock held and shipped from our UK warehouse
Worldwide shipping available, contact us for a quotation
We can ship on your DHL or UPS account if required
Any import duties or taxes are the responsibility of the receiver

Product Details:

Overview

The ZXMN6A11GTA is an N-Channel enhancement mode MOSFET manufactured by DIODES INCORPORATED. This transistor is designed for switching applications requiring a voltage rating of up to 60V and a continuous drain current of 3.1A. It is supplied in a SOT223 surface mount package, facilitating efficient thermal management and compact PCB assembly.

Key Features

N-Channel Enhancement Mode
60V Drain-Source Voltage (V_DS)
3.1A Continuous Drain Current (I_D)
Low On-Resistance (R_DS(on))

Applications

This MOSFET is suitable for various power management and switching circuits. Its voltage and current capabilities make it useful in systems needing efficient and controlled power delivery.

DC-DC Converters
Load Switching
Power Management in Portable Devices