ZXMN3A01FTA – DIODES INCORPORATED
Part Number:
ZXMN3A01FTA
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
N‑Channel MOSFET, 30 V, 1.8 A, SOT23‑3 Package
Datasheet:
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Product Details:
Overview
The ZXMN3A01FTA is a discrete N-Channel enhancement mode MOSFET manufactured by DIODES INCORPORATED. This transistor is designed for low voltage, low on-resistance switching applications. It features a drain-source voltage rating of 30V and a continuous drain current capability of 1.8A. The component is supplied in a compact SOT23-3 surface mount package.
Key Features
- N-Channel Enhancement Mode
- VDS: 30V
- ID: 1.8A
- RDS(on): 150 mΩ (at VGS= 10V)
Applications
This MOSFET is commonly used in various switching and amplification circuits. Its small size and efficient performance make it suitable for portable and space-constrained designs. It is frequently implemented in power management and load switching applications.
- DC-DC Converters
- Load Switching
- Power Management Circuits
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