2N7002 – NXP
N-Channel MOSFET, 60V Vds, Through-Hole
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The 2N7002, manufactured by NXP Semiconductors, is a discrete enhancement-mode N-channel MOSFET fabricated using TrenchMOS technology. This device is characterized by a maximum drain-source voltage (Vds) rating of 60V, enabling its use in low-voltage switching applications. Key electrical parameters include a gate-source threshold voltage (Vgs(th)) typically between 0.8V and 2.1V, and a continuous drain current (Id) dependent on thermal conditions and gate drive. The 2N7002 exhibits a fast switching speed due to its low gate charge (Qg) and gate resistance (Rg). Its low on-state resistance (Rds(on)), specified at a given Vgs and Id, minimizes conduction losses. The device is commonly available in a small signal surface-mount package, facilitating high-density board layouts. Applications include level shifting, load switching, and small signal amplification.
