BF904,215 – NXP

Part Number:

BF904,215

Manufacturer:

NXP

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

RF MOSFET, N-Channel, 7V, 0.03A, Dual Gate, SOT-143

Datasheet:

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Product Details:

Overview

The BF904,215 is an N-channel RF MOSFET manufactured by NXP. This dual-gate transistor is designed for high-frequency amplifier applications. It features a maximum drain-source voltage of 7V and a continuous drain current of 0.03A. The component is supplied in a SOT-143 package, suitable for surface mount assembly.

Key Features

N-Channel MOSFET
Dual Gate Configuration
7V Drain-Source Voltage (Max)
30mA Continuous Drain Current
SOT-143 Package

Applications

This RF MOSFET is commonly utilized in radio frequency amplification circuits and signal processing systems. Its dual-gate structure allows for improved gain control and reduced feedback capacitance, making it ideal for sensitive receiver front-ends and oscillator circuits.

RF Amplifiers
Mixers
Oscillators