PDTA113ZT,215 – NXP
Part Number:
PDTA113ZT,215
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
MALAYSIA
Description:
PNP Bipolar Transistor, 0.1 A, 50 V, TO-236AB
Datasheet:
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Product Details:
Overview
The PDTA113ZT,215 is a PNP bipolar junction transistor (BJT) manufactured by NXP Semiconductors. This device is designed for general-purpose amplification and switching applications. It features a collector current rating of 0.1 A and a collector-emitter voltage of 50 V. The PDTA113ZT,215 is supplied in a compact TO-236AB (SOT-23) package for surface mount assembly.
Key Features
- PNP Polarity
- Collector-Emitter Voltage (Vceo): 50 V
- Collector Current (Ic): 0.1 A
- TO-236AB (SOT-23) Package
Applications
This PNP transistor is suitable for a variety of electronic circuits requiring signal amplification or switching. Its small size and electrical characteristics make it appropriate for use in space-constrained applications.
- General Purpose Amplification
- Switching Circuits
- Driver Stages
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