PDTA114YT,215 – NXP

Electronic Components
 
Part Number:
PDTA114YT,215
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
 
 
Description:

PNP Bipolar Transistor, 0.1 A, 50 V, SOT‑23

 
 
Datasheet:
 
 
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Product Details:

Overview

The PDTA114YT,215 is a PNP bipolar junction transistor (BJT) manufactured by NXP. This device is designed for general-purpose amplification and switching applications. It features a collector current rating of 0.1 A and a collector-emitter voltage rating of 50 V. The transistor is housed in a compact SOT-23 surface-mount package.

Key Features

  • PNP Polarity
  • 0.1 A Collector Current (Ic)
  • 50 V Collector-Emitter Voltage (Vceo)
  • SOT-23 Package

Applications

This PNP transistor is suitable for a variety of electronic circuits requiring signal amplification or switching. Its small size makes it ideal for densely populated circuit boards. It is commonly used in low-power applications.

  • Load Switching
  • Amplifier Circuits
  • Inverter Circuits
 
 
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