SI4463BDY – SILICONIX

Part Number:

SI4463BDY

Manufacturer:

SILICONIX

Date Code:

RoHS:

MSL:

COO:

Description:

P-Channel 20 V 9.8A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

Datasheet:

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Stock Quantity: 13

Selling Unit: Each

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13 in stock

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Product Details:

Overview

The SI4463BDY is a P-Channel MOSFET manufactured by SILICONIX. This surface-mount transistor is designed for switching and amplification applications. It features a drain-source voltage rating of 20V and a continuous drain current of 9.8A when measured at a case temperature (Ta). The device is housed in an 8-SOIC package and has a power dissipation of 1.5W at the specified temperature.

Key Features

P-Channel MOSFET
20V Drain-Source Voltage
9.8A Continuous Drain Current (Ta)
1.5W Power Dissipation (Ta)
Surface Mount 8-SOIC Package

Applications

This P-Channel MOSFET is suitable for various power management and switching circuits. Its characteristics make it applicable in designs requiring efficient load control and voltage regulation.

DC-DC Converters
Load Switching
Power Management Circuits