N-Channel 30 V 12.5A (Ta) 2.5W (Ta) Surface Mount 8-SO
Stock Quantity: 1082
Selling Unit: EACH
Quantity | Price (ex VAT) |
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1+ | 3.19 |
10+ | |
50+ | |
100+ |
1082 in stock
The SI4420DYPBF, manufactured by Infineon (formerly International Rectifier), is an N-channel enhancement mode MOSFET fabricated using a trench MOSFET technology. This device features a drain-source voltage (Vds) rating of 30V and a continuous drain current (Id) of 12.5A, specified at a case temperature where thermal limits are not reached. However, at an ambient temperature (Ta), the continuous drain current is derated due to power dissipation limitations. The device has a power dissipation (Pd) rating of 2.5W at an ambient temperature of 25°C. It is designed for surface mount assembly and is housed in an 8-SO (Small Outline) package. The SI4420DYPBF is typically used in low-side switching applications, load switching, and DC-DC conversion where efficient power management and compact size are critical design considerations. Its low on-resistance (Rds(on)), specified in the datasheet, minimizes conduction losses.