SI4447ADY-T1-GE3 – VISHAY

Part Number:

SI4447ADY-T1-GE3

Manufacturer:

VISHAY

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

P-Channel MOSFET, SO-8: 40V, -7.2A, 0.055Ω Rds(on).

Datasheet:

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Product Details:

Overview

The SI4447ADY-T1-GE3 is a P-Channel MOSFET manufactured by VISHAY. This component is designed for power switching applications requiring a negative gate-source voltage. It features a drain-source voltage rating of 40V and a continuous drain current of -7.2A. The device is packaged in a standard SO-8 surface mount format.

Key Features

P-Channel Enhancement Mode
Vds: 40V
Ids: -7.2A (Continuous)
Rds(on): 0.055Ω @ Vgs=-10V

Applications

This P-Channel MOSFET is suitable for various power management and load switching circuits. Its characteristics make it useful in scenarios where a high-side switch is needed. The SO-8 package allows for efficient heat dissipation in compact designs.

Load Switching
Power Inverters
DC-DC Conversion