BCX17LT1G – ONSEMI

Overview

The onsemi BCX17LT1G is a PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications where moderate current handling and voltage ratings are required. Its critical operational characteristic is its ability to provide a controlled current gain (hFE) of at least 100 at 100mA collector current, enabling efficient signal amplification. A key design consideration for this SOT-23-3 packaged device is managing its 300mW power dissipation; exceeding this limit can lead to thermal runaway, particularly in higher ambient temperatures or continuous high-current operation, necessitating careful thermal management in board layout.

Key Features

• PNP Bipolar Junction Transistor
• Collector-Emitter Voltage (Vce): 45V
• Continuous Collector Current (Ic): 500mA
• Maximum Power Dissipation: 300mW
• DC Current Gain (hFE) Min: 100 @ 100mA, 1V
• Package: SOT-23-3 (TO-236-3, SC-59)

Applications

The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.

• Low-power signal amplification in audio pre-amplifiers
• General-purpose switching for microcontroller interfaces
• Current sinking in battery-powered portable devices
• Load switching for low-voltage DC-DC converters