BCX17LT1 – ONSEMI

Overview

The onsemi BCX17LT1 is a PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications where moderate current handling and voltage blocking are required. Its critical operational characteristic is its 45V collector-emitter breakdown voltage, enabling its use in circuits with moderate voltage swings. A key design consideration when employing the BCX17LT1 is managing its Vce(sat) of 620mV at 500mA collector current; exceeding this saturation voltage can lead to increased power dissipation and reduced efficiency, necessitating careful biasing and load impedance selection for optimal thermal performance and signal integrity.

Key Features

• Collector-Emitter Breakdown Voltage (Vceo): 45 V
• Continuous Collector Current (Ic): 500 mA
• Maximum Power Dissipation (Pd): 225 mW
• DC Current Gain (hFE) Min @ Ic, Vce: 100 @ 100mA, 1V
• Collector Cutoff Current (Icbo): 100 nA
• Package: SOT-23-3 (TO-236-3)

Applications

The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.

• Low-power signal amplification in audio pre-amplifiers
• General-purpose switching for relay drivers and LED control
• Interfacing with microcontrollers for load actuation
• Inverting stages in basic logic circuits