ZXMN10A08E6TA – DIODES INCORPORATED

Part Number:

ZXMN10A08E6TA

Manufacturer:

DIODES INCORPORATED

Date Code:

08+

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N-Channel MOSFET, 100 V, 1.5 A, SOT-26 Package

Datasheet:

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Product Details:

Overview

The ZXMN10A08E6TA is an N-Channel enhancement mode MOSFET manufactured by DIODES INCORPORATED. This component is designed for switching and amplification applications requiring a voltage rating of up to 100V and a continuous drain current of 1.5A. It is supplied in a compact SOT-26 surface mount package.

Key Features

N-Channel enhancement mode
100V Drain-Source Voltage (V_DS)
1.5A Continuous Drain Current (I_D)
Low On-Resistance (R_DS(on))

Applications

This MOSFET is suitable for various low-power switching and load management tasks. Its small size and efficient performance make it appropriate for use in portable devices and space-constrained designs.

DC-DC Conversion
Load Switching
Power Management Circuits