IGBT, N-Channel, 1200V V(BR)CES, 75A I(C)
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The SKM75GB123D is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by SEMIKRON. This component is designed for high-voltage switching applications, offering a collector-emitter breakdown voltage (V(BR)CES) of 1200V and a continuous collector current (I(C)) rating of 75A. It is supplied in a standard module package.
This IGBT is commonly used in power electronics systems requiring efficient and reliable switching at elevated voltages. Its characteristics make it suitable for various industrial and energy-related applications.