SK10GD123 – SEMIKRON

Part Number:

SK10GD123

Manufacturer:

SEMIKRON

Date Code:

RoHS:

MSL:

COO:

Description:

N-Channel IGBT Transistor, 1200 V, 2.7 V, 16 A, 2.3 mJ, T12

Datasheet:

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Product Details:

Overview

The SK10GD123 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) manufactured by SEMIKRON. This device is designed for high-voltage switching applications, offering a collector-emitter voltage rating of 1200 V and a gate-emitter threshold voltage of 2.7 V. It features a continuous collector current of 16 A and a turn-off energy of 2.3 mJ. The SK10GD123 is packaged in a T12 housing.

Key Features

N-Channel IGBT
1200V Collector-Emitter Voltage
16A Continuous Collector Current
2.3 mJ Turn-Off Energy

Applications

This IGBT is suitable for use in power electronics systems that require efficient and reliable high-voltage switching. Its characteristics make it applicable in various industrial and commercial settings.

Uninterruptible Power Supplies (UPS)
Welding Equipment
Induction Heating Systems