SISS26DN-T1-GE3 – VISHAY
Part Number:
SISS26DN-T1-GE3
Manufacturer:
Date Code:
19
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
N-Channel MOSFET, 60 V, 60 A, PPAK1212-8S Package
Datasheet:
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Product Details:
Overview
The SISS26DN-T1-GE3 is an N-Channel MOSFET manufactured by VISHAY. This component is designed for power switching applications, offering a drain-source voltage of 60V and a continuous drain current of 60A. It is housed in a PPAK1212-8S surface-mount package, suitable for automated assembly processes.
Key Features
- 60V Drain-Source Voltage
- 60A Continuous Drain Current
- N-Channel Configuration
- PPAK1212-8S Package
Applications
This MOSFET is commonly used in various power management circuits and systems. Its specifications make it suitable for implementation in industrial and consumer electronics where efficient power control is required.
- DC-DC Converters
- Motor Control Circuits
- Load Switching
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