SISS04DN-T1-GE3 – VISHAY

Part Number:

SISS04DN-T1-GE3

Manufacturer:

VISHAY

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N-Channel 30 V (D-S) MOSFET, POWERPAK 1212 Package

Datasheet:

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Product Details:

Overview

The SISS04DN-T1-GE3 is an N-Channel MOSFET manufactured by VISHAY. This transistor is designed for switching and amplification applications, offering a drain-source voltage rating of 30V. It is housed in a POWERPAK 1212 surface-mount package, providing efficient thermal performance and a compact footprint for circuit board integration.

Key Features

N-Channel configuration
30V Drain-Source Voltage (Vds)
POWERPAK 1212 package
Surface Mount Device (SMD)

Applications

This N-Channel MOSFET is commonly utilized in various electronic systems requiring efficient power management and switching capabilities. Its compact size and thermal characteristics make it suitable for densely populated circuit boards.

DC-DC converters
Load switching
Power management circuits