SISH625DN – VISHAY

The Vishay SISH625DN is a P-Channel TrenchFET® power MOSFET specifically optimized for high-side load switching and battery protection applications. Its low on-resistance (RDS(on)) at low gate drive voltages enables efficient power management in portable devices. The SISH625DN features a logic-level gate drive, allowing direct interface with microcontrollers and other low-voltage control circuitry. This MOSFET is rated for a VDS of -20V and an ID of -6.1A, ensuring robust performance in demanding conditions. Packaged in a space-saving PowerPAK® SC-70 SMD format, it minimizes PCB footprint. Its operating temperature range spans from –55°C to 150°C, ensuring reliable operation in harsh environments. The SISH625DN’s enhanced avalanche ruggedness provides added protection against transient voltage spikes, making it a suitable choice for robust and efficient power switching designs.