SISH114ADN-T1-GE3 – VISHAY
Part Number:
SISH114ADN-T1-GE3
Manufacturer:
Date Code:
N/A
RoHS:
RoHS Compliant
MSL:
1
COO:
N/A
Description:
N-Channel MOSFET, 30V, 35A, 0.0062 Ohm, PowerPAK 1212-8SH, Surface Mount.
Datasheet:
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Stock Quantity: 332
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.25 |
| 10+ | |
| 50+ | |
| 100+ |
332 in stock
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Product Details:
Overview
The SISH114ADN-T1-GE3 is an N-Channel MOSFET manufactured by VISHAY. This component is designed for switching and amplification applications, offering a drain-source voltage of 30V and a continuous drain current of 35A. It features a low on-state resistance of 0.0062 Ohm. The device is provided in a PowerPAK 1212-8SH surface mount package for efficient thermal performance and compact board placement.
Key Features
- N-Channel Enhancement Mode
- VDS: 30V
- ID: 35A
- RDS(on): 0.0062 Ohm
- PowerPAK 1212-8SH Package
Applications
This MOSFET is suited for use in various power management and control systems. Its characteristics make it appropriate for deployment in circuits requiring efficient switching and minimal power loss.
- DC-DC Converters
- Load Switching
- Power Supplies
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