SISH114ADN-T1-GE3 – VISHAY
N-Channel Power MOSFET, 30V, 18A (Ta) / 35A (Tc), 3.7W (Ta) / 39W (Tc), 0.0062 Ohm, Surface Mount, PowerPAK 1212-8SH
Stock Quantity: 166
Selling Unit: PACK OF 2
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 4.49 |
| 10+ | |
| 50+ | |
| 100+ |
166 in stock
Contact us for volume pricing
- Same day shipping if ordered before 14.00 GMT
- 6 month warranty on all stock items
- All stock held and shipped from our UK warehouse
- Worldwide shipping available, contact us for a quotation
- We can ship on your DHL or UPS account if required
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The Vishay SISH114ADN-T1-GE3 is a 30V N-channel power MOSFET optimized for high-frequency synchronous rectification and DC-DC conversion applications. This device boasts an ultra-low on-resistance, minimizing conduction losses and improving overall efficiency. Its fast switching speed reduces switching losses, making it suitable for demanding power management circuits. Encased in a space-saving PowerPAK® 1212-8 SMD package, it facilitates high-density board designs. The SISH114ADN-T1-GE3 offers a continuous drain current rating of 18A and operates reliably within a temperature range of –55°C to 150°C. Its gate drive requirements are minimal, allowing for simplified driver circuitry. This MOSFET is particularly advantageous in portable devices, providing high performance with minimal power consumption.
