N-Channel MOSFET, ±20 V, 2 W, SO-8, ±5 A Drain, 62.5
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The SI9936BDY-E3 is an N-Channel MOSFET manufactured by VISHAY. This component is designed for switching and amplification applications, offering a drain current of ±5 A. It is housed in an SO-8 package and features a power dissipation of 2 W. The device operates with a gate-source voltage of ±20 V.
This MOSFET is commonly used in various electronic circuits requiring efficient switching capabilities. Its compact size and electrical characteristics make it suitable for a range of applications.