SI9910DJ-E3 – VISHAY
Part Number:
SI9910DJ-E3
Manufacturer:
Date Code:
2012
RoHS:
RoHS Compliant
MSL:
1
COO:
Description:
N-Channel MOSFET, 100V Vds, 30A Id, D2PAK Package.
Datasheet:
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Product Details:
Overview
The SI9910DJ-E3 is an N-Channel MOSFET manufactured by VISHAY. It is designed for power switching applications requiring efficient performance. This device features a drain-source voltage (Vds) rating of 100V and a continuous drain current (Id) capability of 30A. The SI9910DJ-E3 is housed in a D2PAK package, suitable for surface mount assembly.
Key Features
- N-Channel Enhancement Mode
- 100V Drain-Source Voltage (Vds)
- 30A Continuous Drain Current (Id)
- Low On-Resistance (Rds(on))
Applications
This N-Channel MOSFET is commonly utilized in various power management and control circuits. Its voltage and current handling capabilities make it suitable for demanding environments. The D2PAK package allows for efficient heat dissipation in high-power applications.
- DC-DC Converters
- Motor Control
- Power Inverters
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