SI5517DU-T1-GE3 – VISHAY
20 V N/P-Channel MOSFET, 7.2 A/4.6 A Current Rating
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Overview
The SI5517DU-T1-GE3 is a 20V N/P-Channel enhancement mode MOSFET manufactured by VISHAY. This device integrates both an N-channel and a P-channel MOSFET within a single package, offering design flexibility. It is rated for a drain current of 7.2A for the N-channel and 4.6A for the P-channel, making it suitable for power switching applications. The component is supplied in a standard surface-mount package.
Key Features
- 20V Drain-Source Voltage
- N-Channel: 7.2A Continuous Drain Current
- P-Channel: 4.6A Continuous Drain Current
- Enhancement Mode Operation
- Surface Mount Package
Applications
This dual N/P-Channel MOSFET is commonly used in various electronic circuits requiring efficient power control and switching. Its compact size and integrated design make it appropriate for space-constrained applications where both high-side and low-side switching are needed.
- DC-DC Converters
- Load Switching
- Power Management Circuits
