SI5513CDC-T1-GE3 – VISHAY
Part Number:
SI5513CDC-T1-GE3
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
N/P-Channel MOSFET, 20 V, 4 A, 1206-8
Datasheet:
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Product Details:
Overview
The SI5513CDC-T1-GE3 is a N/P-Channel MOSFET manufactured by VISHAY. This complementary MOSFET is designed for switching applications requiring both N-channel and P-channel devices in a single package. It features a drain-source voltage of 20V and a continuous drain current of 4A. The component is housed in a compact 1206-8 surface mount package.
Key Features
- N/P-Channel Configuration
- 20V Drain-Source Voltage (Vds)
- 4A Continuous Drain Current (Id)
- Surface Mount 1206-8 Package
Applications
This complementary MOSFET is commonly used in portable electronic devices and power management circuits. Its small size and dual-channel configuration make it suitable for space-constrained applications where efficient power switching is needed.
- Load Switching
- Power Management Circuits
- DC-DC Conversion
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